| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD454isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD454YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD454YisPbfree,insideandout.ItusesPb-freedieattachan | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD454YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD454YisPbfree,insideandout.ItusesPb-freedieattachan | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
PlasticEncapsulatedDevicenull | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
N-Channel40V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4 | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type1-Channel(FormB)Type HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS | ||
HE(High-functionEconomy)Type[2-Channel(FormB)Type] FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho | NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國)有限公司 | NAIS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
AOS |
09+ |
TO252 |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價 | ||
AOS/萬代 |
22+ |
TO-252 |
42289 |
原裝正品現(xiàn)貨 |
詢價 | ||
原裝AOS |
19+ |
TO-252 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
AOS/萬代 |
1942+ |
TO-252 |
9852 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價 | ||
原裝AOS |
24+ |
TO-252 |
35200 |
一級代理/放心采購 |
詢價 | ||
AOS |
23+ |
TO-252 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
AOS/萬代 |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
AOS |
21+ |
TO-252 |
811 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
A |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 | ||
AOS/萬代 |
23+ |
SOT252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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