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AOD454YL

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD454YusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardproductAOD454YisPbfree,insideandout.ItusesPb-freedieattachan

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF454L

PlasticEncapsulatedDevicenull

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOTF454L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOU454

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOU454

N-Channel40V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

AOU454

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOU454L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU454usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOU454isPb-free(meetsROHS&Sony259specifications).AOU4

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AQV454

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454A

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454AX

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454AZ

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454H

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454HA

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454HAX

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQV454HAZ

HE(High-functionEconomy)Type1-Channel(FormB)Type

HE(High-functionEconomy)Type1-Channel(FormB)Type FEATURES 1.FormB(Normally-closed)type Hasbeenrealizedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrel

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQW454

HE(High-functionEconomy)Type[2-Channel(FormB)Type]

FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQW454A

HE(High-functionEconomy)Type[2-Channel(FormB)Type]

FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQW454AX

HE(High-functionEconomy)Type[2-Channel(FormB)Type]

FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

AQW454AZ

HE(High-functionEconomy)Type[2-Channel(FormB)Type]

FEATURES 1.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.78×(H)3.9mm(W).252×(L).385×(H).154inch,8-pinDIPsize(throughholeterminaltype). 2.Applicablefor2FormBuseaswellastwoindependent1FormBuse. 3.Controlslow-levelanalogsignals Pho

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

BD454N

45AMPBLOCKDIODES

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    AOD454YL

  • 制造商:

    AOSMD

  • 制造商全稱:

    Alpha & Omega Semiconductors

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
APLHA
21+
TO-252
30000
只做正品原裝現(xiàn)貨
詢價(jià)
AOSMD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
VBSEMI/臺(tái)灣微碧
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
AO
24+
TO-252
35000
詢價(jià)
AO
23+
TO-252
5000
原裝正品,假一罰十
詢價(jià)
AOS
17+
TO-252
6200
100%原裝正品現(xiàn)貨
詢價(jià)
AOS
2016+
TO252
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價(jià)
Aos
2339+
TO-252
5650
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
詢價(jià)
AO
2020+
SOT252
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
AO
22+
TO252
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢(shì)!!
詢價(jià)
更多AOD454YL供應(yīng)商 更新時(shí)間2024-12-29 9:01:00