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首頁 >AOB20S60>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
AOB20S60	文件：299.39 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOB20S60	文件：330.4 Kbytes Page：7 Pages	600V 20A a MOS Power Transistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOB20S60L	文件：330.39 Kbytes Page：7 Pages	600V 20A a MOS TM Power Transistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOB20S60L	文件：519.87 Kbytes Page：7 Pages	600V 20A a MOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOK20S60	文件：325.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-247packaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?PFCstages ?Powersupply ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOK20S60	文件：256.839 Kbytes Page：6 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOK20S60L	文件：453.66 Kbytes Page：6 Pages	600V20AaMOS GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOK20S60L	文件：422.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOT20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOT20S60	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOT20S60L	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOT20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOTF20S60	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOTF20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOTF20S60	文件：296.46 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOTF20S60	文件：1.15441 Mbytes Page：11 Pages	N-Channel650-V(D-S)SuperJunctionMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
AOTF20S60L	文件：296.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
AOTF20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOV20S60	文件：77.21 Kbytes Page：1 Pages	DFN8X8PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體	AOSMD
AOW20S60	文件：344.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) ?100avalanchetested ?MinimumLot-to-L	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市泓利達微科技有限公司	AOB20S60	AOS/萬代	24+	TO-263	333888	專業(yè)直銷原裝AOS一系列可訂貨	詢價
深圳市鑫宇楊電子科技有限公司	AOB20S60	AOS	2020+	TO-263	350000	100%進口原裝正品公司現(xiàn)貨庫存	詢價
深圳市瑞新盛科技有限公司	AOB20S60	AOS		TO-263	20000	原裝正品	詢價
中天科工半導體（深圳）有限公司	AOB20S60	AOS萬代	20+	TO-263	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市百諾芯科技有限公司	AOB20S60	AOS/萬代	23+	TO-263	24190	原裝正品代理渠道價格優(yōu)勢	詢價
深圳市鼎欣微電子有限公司	AOB20S60	AOS/萬代	21+	TO-263	30000	只做正品原裝現(xiàn)貨	詢價
深圳市百域芯科技有限公司	AOB20S60	AOS/萬代	21+	TO-263	30000	優(yōu)勢供應實單必成可13點增值稅	詢價
深圳市正納電子有限公司	AOB20S60	AOS(萬代)	23+	NA	20094	正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持	詢價
深圳市國宇半導體科技有限公司	AOB20S60	AOS/萬代	23+	TO-263	32500	公司只做原裝正品	詢價
深圳市威爾健半導體有限公司	AOB20S60	AOS/萬代	23+	TO-263	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價

更多AOB20S60供應商更新時間2024-11-16 14:02:00

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