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AON2801

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON2801/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. AON2801andAON2801Lareelectricallyidentical. -RoHSCompli

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AON2801

DUALP-CHANNELENHANCEMENTMODEMOSFET

Application| ?ReverseBatteryprotection ?Loadswitch ?Powermanagement ?MotorControl| ?PortablePowerAdaptors

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

APM2801B

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2801BC-TR

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2801BC-TRL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2801BC-TU

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2801BC-TUL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

ASIKV2801

SILICONHYPERABRUPTTUNINGVARACTOR

ASI

Advanced Semiconductor

BGA2801

MMICwidebandamplifier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BGA2801

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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8550
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NULL
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8200
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更多ANY2801供應(yīng)商 更新時(shí)間2025-1-25 16:36:00

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