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AM83135-030中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

AM83135-030
廠商型號

AM83135-030

功能描述

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

文件大小

57.5 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-18 22:50:00

AM83135-030規(guī)格書詳情

DESCRIPTION

The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

This device is characterized at 100μsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM83135-030 is supplied in the IMPAC? Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 30 W MIN. WITH 5.5 dB GAIN

產(chǎn)品屬性

  • 型號:

    AM83135-030

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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