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AM83135-010中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM83135-010
廠商型號(hào)

AM83135-010

功能描述

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

文件大小

61.46 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-18 22:50:00

AM83135-010規(guī)格書(shū)詳情

DESCRIPTION

The AM83135-010 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

This device is characterized at 100μsec pulse width and 10 duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

The AM83135-010 is supplied in the IMPAC? hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 10 W MIN. WITH 5.0 dB GAIN

產(chǎn)品屬性

  • 型號(hào):

    AM83135-010

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱(chēng):

    STMicroelectronics

  • 功能描述:

    RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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