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AN1004

Abroadportfolioofhighperformance,best-in-classSerialMemoryProductstomeetallyourdesignrequirements.

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

APE1004

verylowcostvoiceandmelodysynthesizerwith4-bitsCPU

GeneralDescription TheAPExx04seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)output,etc.Theaudiosynthesizercontainson

APLUS

Aplus Intergrated Circuits

APE1004H

THESLIMPOWERRELAY

FEATURES ?Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting ?Wideswitchingcapacity:100mA/12VDC-6A/250VAC ?Highsensitivity:170mW ?Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

APT1004

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RGN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1004RKN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RKN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ARD1004H

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

ARD1004HC

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

ARD1004HCQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

ARD1004HQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

ARJ-1004

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

AS1004

MicropowerVoltageReference

Description TheAS1004isatwo-terminalprecisionband-gapvoltagereferencewithalowturn-oncurrentof10μA. Features ?Lowvoltagereference ?10μAturn-oncurrentforAS1004-1.2 ?20μAturn-oncurrentforAS1004-2.5 ?±4mV(0.3)initialaccuracyforAS1004-1.2 ?

Astec

Astec America, Inc

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ARTCHIP
23+
SOD123
45000
原裝正品現(xiàn)貨
 詢價(jià)
N/A
23+
80000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
N/A
23+
80000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ALD
24+
TO-220
24
絕對(duì)原廠原裝,長(zhǎng)期優(yōu)勢(shì)可定貨
 詢價(jià)
更多ALD1004TR供應(yīng)商 更新時(shí)間2024-12-29 17:10:00

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