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APT1004RBN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RBN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RGN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RGN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1004RKN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1004RKN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ARD1004H

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HC

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HCQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARD1004HQ

26.5GHz,18GHzCOAXIALSWITCH

FEATURES 1.Highfrequencycharacteristics(Impedance50?) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國)有限公司

ARJ-1004

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

AS1004

MicropowerVoltageReference

Description TheAS1004isatwo-terminalprecisionband-gapvoltagereferencewithalowturn-oncurrentof10μA. Features ?Lowvoltagereference ?10μAturn-oncurrentforAS1004-1.2 ?20μAturn-oncurrentforAS1004-2.5 ?±4mV(0.3)initialaccuracyforAS1004-1.2 ?

Astec

Astec America, Inc

ASPI-1004

SMDPowerInductor

ABRACON

Abracon Corporation

AT1004

PHASECONTROLTHYRISTOR

PHASECONTROLTHYRISTOR Repetitivevoltageupto1600V Meanon-statecurrent1545A Surgecurrent24.6kA

POSEICO

Power Semiconductors

AXHV1004

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

advanced XTAL Products

B1004ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1004RW

Compact1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

詳細(xì)參數(shù)

  • 型號(hào)：

    APT1004RBN

  • 制造商：

    ADPOW

  • 制造商全稱：

    Advanced Power Technology

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT
24+
8866
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APT
22+
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8200
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APT
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APT
24+
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564
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ADPOW
23+
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19960
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APT
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NULL
6000
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APT
91+
31
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APT
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12300
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APT
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8000
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APT
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NULL
6000
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更多APT1004RBN供應(yīng)商 更新時(shí)間2024-10-24 16:30:00

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