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AIKB15N65DF5

Marking：AK15EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode ?Maximumjunctiontemperature175°C ?Dynamicallystre

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB15N65DH5

Marking：AK15EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?PlugandplayreplacementofpreviousgenerationIGBTs ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB30N65DF5

Marking：AK30EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode ?Maximumjunctiontemperature175°C ?Dynamicallystre

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB30N65DH5

Marking：AK30EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti-parallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?PlugandplayreplacementofpreviousgenerationIGBTs ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB40N65DF5

Marking：AK40EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode ?Maximumjunctiontemperature175°C ?Dynamicallystre

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB40N65DH5

Marking：AK40EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?PlugandplayreplacementofpreviousgenerationIGBTs ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB50N65DF5

Marking：AK50EDF5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedF5technologyoffering: ?Best-in-Classefficiencyinhardswitchingandresonant topologies ?650Vbreakdownvoltage ?LowgatechargeQG ?IGBTcopackedwithRAPID1fastandsoftantiparalleldiode ?Maximumjunctiontemperature175°C ?Dynamicallystre

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKB50N65DH5

Marking：AK50EDH5；Package：PG-TO263-3；High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode

FeaturesandBenefits: HighspeedH5technologyoffering: .Best-in-Classefficiencyinhardswitchingandresonant topologies .PlugandplayreplacementofpreviousgenerationIGBTs .650Vbreakdownvoltage .LowgatechargeQG .IGBTcopackedwithRAPID1fastandsoftantiparalleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKQ120N75CP2

Marking：AKQ12FCP；Package：PG-TO247PLUS-3；EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features ?VCE=750V ?IC=120A ?750Vcollector-emitterblockingvoltagecapability ?Suitablefor470VVDCsystemsandincreaseovervoltagemarginfor400VVDCsystems ?VerylowVCE(sat),1.30VatICnom=120A,25°C ?Shortcircuitrobusttsc=5μsatVCE=470V,VGE=15V ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AIKQ200N75CP2

Marking：AKQ20FCP；Package：PG-TO247PLUS-3；EDT2 IGBT and emitter controlled diode in TO247PLUS package

Features ?VCE=750V ?IC=200A ?Best-in-classhighestpowerdensity,IC=200A ?750Vcollector-emitterblockingvoltagecapability ?Suitablefor470VVDCsystemsandincreaseovervoltagemarginfor400VVDCsystems ?VerylowVCE(sat),1.30VatICnom=200A,25°C ?Shortcircu

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
TO-263
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
Infineon(英飛凌)
2447
PG-TO263-3-2
115000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
2021+
PG-TO263-3-2
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-TO263-3-2
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
24+
PG-TO263-3-2
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
21+
PG-TO263-3-2
6820
只做原裝,質(zhì)量保證
 詢價
Infineon/英飛凌
21+
PG-TO263-3-2
13880
公司只售原裝,支持實單
 詢價
Infineon/英飛凌
23+
PG-TO263-3-2
10000
原裝正品，支持實單
 詢價
Infineon/英飛凌
23+
PG-TO263-3-2
25630
原裝正品
 詢價
Infineon/英飛凌
PG-TO263-3-2
6000
詢價
更多AIK供應(yīng)商 更新時間2025-4-17 17:59:00

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