Features and Benefits:

High speed H5 technology offering:

? Best-in-Class efficiency in hard switching and resonant

topologies

? Plug and play replacement of previous generation IGBTs

? 650V breakdown voltage

? Low gate charge QG

? IGBT copacked with RAPID 1 fast and soft antiparallel diode

? Maximum junction temperature 175°C

? Dynamically stress tested

? Qualified according to AEC-Q101

? Green package (RoHS compliant)

? Complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

AIKB40N65DH5屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單。英飛凌科技股份公司制造生產(chǎn)的AIKB40N65DH5晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。