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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

AEDS-9240

Easyassemblywithalignmentjig

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

AK9240

AFEwithDual12-Bit1MSPSSARADC

AKMAsahi Kasei Microsystems

旭化成微電子旭化成微電子株式會社

BD9240F

SiliconMonolithicIntegratedCircuit

?20VHighvoltageprocess ?2CHcontrolwithPush-Pull ?Lampcurrentandvoltagesensefeedbackcontrol ?SequencingeasilyachievedwithSoftStartControl ?ShortcircuitprotectionwithTimerLatch ?UnderVoltageLockOut ?Mode-selectabletheoperatingorstand-bymodeby

ROHMRohm

羅姆羅姆半導(dǎo)體集團

BD9240FV

SiliconMonolithicIntegratedCircuit

?20VHighvoltageprocess ?2CHcontrolwithPush-Pull ?Lampcurrentandvoltagesensefeedbackcontrol ?SequencingeasilyachievedwithSoftStartControl ?ShortcircuitprotectionwithTimerLatch ?UnderVoltageLockOut ?Mode-selectabletheoperatingorstand-bymodeby

ROHMRohm

羅姆羅姆半導(dǎo)體集團

CDE9240DG

92SeriesCommsAndNetworkEnclosure

Productoverview Lowprofileanddeepprofileplastichousingswith removableendpanels.Idealforcommunication equipmentsuchasWi-Firouters. ?StylishlydesignedABSplasticcasewithdouble detachablepanels ?FlameresistantABS(UL94-V0),30sizes, availableinoff-whiteandda

CAMDENBOSS

CamdenBoss Ltd.

FRM9240D

7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRM9240H

7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRM9240R

7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRS9240D

7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRS9240H

7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRS9240R

7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

GFC9240

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

IRF9240

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.5ohm,Id=-11A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-st

IRF

International Rectifier

IRF9240

P-CHANNELPOWERMOSFET

FEATURES ?P–CHANNELPOWERMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES

SEME-LAB

Seme LAB

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9240

-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET

-9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance

Intersil

Intersil Corporation

IRF9240

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9240

SimpleDriveRequirements

IRF

International Rectifier

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

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7750
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9845
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