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FRS9240H

7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRS9240R

7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

GFC9240

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

IRF9240

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.5ohm,Id=-11A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-st

IRF

International Rectifier

IRF9240

P-CHANNELPOWERMOSFET

FEATURES ?P–CHANNELPOWERMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES

SEME-LAB

Seme LAB

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9240

-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET

-9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance

Intersil

Intersil Corporation

IRF9240

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9240

SimpleDriveRequirements

IRF

International Rectifier

IRF9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9240SMD

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9240-SMD

P-CHANNELPOWERMOSFET

FEATURES ?P–CHANNELPOWERMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES

SEME-LAB

Seme LAB

IRFM9240

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM9240

SimpleDriveRequirements

IRF

International Rectifier

IRFM9240

POWERMOSFETTHRU-HOLE(TO-254AA)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFN9240

POWERMOSFETN-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-11A)

RDS(on)0.51? ID-11A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRF

International Rectifier

IRFN9240

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFN9240

SimpleDriveRequirements

IRF

International Rectifier

IRFN9240SMD

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號(hào):

    FRS9240H

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs

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更多FRS9240H供應(yīng)商 更新時(shí)間2024-12-31 23:00:00