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| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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TRANSISTOR竊?NP竊 FEATURES Powerdissipation PCM:0.5W（Tamb=25℃） Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150℃ | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
SiliconPlanarEpitaxialTransistor FEATURES ●Lowsaturationvoltage ●Highspeedswitchingtime ●Smallflatpackage ●PC=1.0to2.0W(mountedonceramicsubstrate) ●Complementaryto2SC2873 | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
PowerAmplifierApplications PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highspeedswitchingtime:tstg=1.0μs(typ.) ?Smallflatpackage ?PC=1.0to2.0W(mountedonaceramicsubstrate) ?Complementaryto2SC2873 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconPlanarEpitaxialTransistor | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Lowcollectorsaturationvoltage,Highspeedswitchingtime,smallflatpackage,Complementaryto2SC2873. Applications Poweramplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
NewJerseySemi-ConductorProducts, NewJerseySemi-ConductorProducts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSISTOR(PNP) FEATURES ●Complementaryto2SC2873 ●SmallFlatPackage ●PowerAmplifierandSwitchingApplications ●LowSaturationVoltage ●HighSpeedSwitchingTime | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司 | HTSEMI |
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