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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
71V35761S166PFG	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S166PFG8	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S166PFGI	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S166PFGI8	文件：319.72 Kbytes Page：23 Pages	128K x 36 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆128Kx36memoryconfigurations ◆Supportshighsystemspeed: Commercial: –200MHz3.1nsclockaccesstime CommercialandIndustrial: –183MHz3.3nsclockaccesstime –166MHz3.5nsclockaccesstime ◆LBOinputselectsinterleavedorlinearburstmode ◆3.3Vcorepowersupply	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V35761S166PFG8	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：100-LQFP 類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V35761S166PFGI	文件：100 bytes Page：1 Pages	包裝：托盤封裝/外殼：100-LQFP 類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V35761S166PFGI8	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：100-LQFP 類別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 4.5MBIT PARALLEL 100TQFP	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V35761S166BG	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BGG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BGGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BGI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQ	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166BQI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PF	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PFG	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PFGI	文件：972.44 Kbytes Page：21 Pages	3.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect	IDT Integrated Device Technology, Inc.	IDT
IDT71V35761S166PFI	文件：282.83 Kbytes Page：22 Pages	128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec	IDT Integrated Device Technology, Inc.	IDT

產(chǎn)品屬性

產(chǎn)品編號(hào)：
71V35761S166PFG8
制造商：
Renesas Electronics America Inc
類別：
集成電路（IC） > 存儲(chǔ)器
包裝：
托盤
存儲(chǔ)器類型：
易失
存儲(chǔ)器格式：
SRAM
技術(shù)：
SRAM - 同步，SDR
存儲(chǔ)容量：
4.5Mb（128K x 36）
存儲(chǔ)器接口：
并聯(lián)
電壓 - 供電：
3.135V ~ 3.465V
工作溫度：
0°C ~ 70°C（TA）
安裝類型：
表面貼裝型
封裝/外殼：
100-LQFP
供應(yīng)商器件封裝：
100-TQFP（14x14）
描述：
IC SRAM 4.5MBIT PARALLEL 100TQFP

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
瀚佳科技(深圳)有限公司	71V35761S166PFG8	IDT, Integrated Device Technol	24+	100-TQFP(14x14)	56200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市艾宇欣科技有限公司	71V35761S166PFG8	IDT	1931+	N/A	1186	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)
艾睿國(guó)際（香港）有限公司	71V35761S166PFG8	RENESAS(瑞薩)/IDT	2117+	TQFP-100(14x14)	315000	1000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,	詢價(jià)
深圳市科雨電子有限公司	71V35761S166PFG8	IDT	20+	QFP-100	1000	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市冠億通科技有限公司	71V35761S166PFG8	Renesas	21+		25000	原廠原包深圳現(xiàn)貨主打品牌假一賠百可開票!	詢價(jià)
訊運(yùn)(深圳/上海)電子有限公司	71V35761S166PFG8	RENESAS(瑞薩)/IDT	2021+	TQFP-100(14x14)	499		詢價(jià)
萬(wàn)三科技(深圳)有限公司	71V35761S166PFG8	RENESAS(瑞薩電子)	22+	NA	500000	萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂	詢價(jià)
深圳市易訊博科技有限公司	71V35761S166PFG8	IDT	22+	NA	1186	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市鵬順微電子科技有限公司	71V35761S166PFG8	Integrated Device Technology	2022+	原廠原包裝	8600	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市高捷芯城科技有限公司	71V35761S166PFG8	RENESAS(瑞薩)/IDT	23+	TQFP100(14x20)	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)

更多71V35761S166PF供應(yīng)商更新時(shí)間2024-12-28 10:00:00

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