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7164S20TPG

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20TPG

包裝:托盤 封裝/外殼:28-DIP(0.300",7.62mm) 類別:集成電路(IC) 存儲器 描述:IC SRAM 64KBIT PARALLEL 28DIP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20TPGI

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20TPG8

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20TPG88

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20TPGI

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20TPGI8

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20TPGI

包裝:管件 封裝/外殼:28-DIP(0.300",7.62mm) 類別:集成電路(IC) 存儲器 描述:IC SRAM 64KBIT PARALLEL 28DIP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

IDT7164S20D

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20DB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20P

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20PB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TD

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TDB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TP

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TPB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20Y

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    7164S20TPG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲容量:

    64Kb(8K x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    20ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    28-DIP(0.300",7.62mm)

  • 供應(yīng)商器件封裝:

    28-PDIP

  • 描述:

    IC SRAM 64KBIT PARALLEL 28DIP

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
詢價
IDT, Integrated Device Technol
21+
28-PDIP
56200
一級代理/放心采購
詢價
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
RENESAS(瑞薩)/IDT
2117+
PDIP-28
315000
28個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
詢價
IDT
20+
DIP-28
280
就找我吧!--邀您體驗愉快問購元件!
詢價
IDT, Integrated Device Technol
21+
NA
11200
正品專賣,進口原裝深圳現(xiàn)貨
詢價
IDT,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
RENESAS(瑞薩)/IDT
2021+
PDIP-28
499
詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
更多7164S20TPG供應(yīng)商 更新時間2024-10-27 9:28:00