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7164S20YGI

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YGI

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20YGI

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YGI8

CMOS Static RAM 64K (8K x 8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164S20YGI8

CMOS Static RAM 64K

IDT

Integrated Device Technology, Inc.

7164S20YGI8

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類(lèi)別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT7164S20D

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20DB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20P

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20PB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TD

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TDB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TP

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20TPB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20Y

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164S20YB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    7164S20YGI

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    管件

  • 存儲(chǔ)器類(lèi)型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲(chǔ)容量:

    64Kb(8K x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫(xiě)周期時(shí)間 - 字,頁(yè):

    20ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    28-BSOJ(0.300",7.62mm 寬)

  • 供應(yīng)商器件封裝:

    28-SOJ

  • 描述:

    IC SRAM 64KBIT PARALLEL 28SOJ

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS(瑞薩)/IDT
2022+原裝正品
SOJ-28
18000
支持工廠BOM表配單 公司只做原裝正品貨
詢價(jià)
IDT, Integrated Device Technol
21+
28-SOJ
56200
一級(jí)代理/放心采購(gòu)
詢價(jià)
RENESAS(瑞薩)/IDT
1921+
SOJ-28
3575
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
詢價(jià)
IDT
1931+
N/A
1186
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
詢價(jià)
RENESAS(瑞薩)/IDT
2117+
SOJ-28
315000
27個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
詢價(jià)
IDT
20+
SOP-28
540
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
IDT,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票!
詢價(jià)
RENESAS(瑞薩)/IDT
2021+
SOJ-28
499
詢價(jià)
RENESAS(瑞薩電子)
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
詢價(jià)
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
更多7164S20YGI供應(yīng)商 更新時(shí)間2024-10-27 8:24:00