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71256L25YG

CMOS Static RAM 256K (32K x 8-Bit)

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71256L25YG

包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71256L25YGI8

CMOS Static RAM 256K (32K x 8-Bit)

IDT

Integrated Device Technology, Inc.

71256L25YGI

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71256L25YGI8

包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71256L25D

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25DB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25L

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25LB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25P

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25PB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25TD

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25TDB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25Y

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

IDT71256L25YB

CMOSSTATICRAM256K(32Kx8-BIT)

DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.)

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    71256L25YG

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲(chǔ)容量:

    256Kb(32K x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁:

    25ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    28-BSOJ(0.300",7.62mm 寬)

  • 供應(yīng)商器件封裝:

    28-SOJ

  • 描述:

    IC SRAM 256KBIT PARALLEL 28SOJ

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT, Integrated Device Technol
24+
28-SOJ
56200
一級(jí)代理/放心采購
詢價(jià)
IDT
1931+
N/A
231
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
IDT
20+
SOP-28
3854
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IDT, Integrated Device Technol
21+
NA
11200
正品專賣,進(jìn)口原裝深圳現(xiàn)貨
詢價(jià)
IDT,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價(jià)
IDT
22+
NA
231
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
Renesas Electronics Corporatio
23+/24+
28-BSO
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
Renesas Electronics America In
24+
28-BSOJ(0.300 7.62mm 寬)
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
RENESAS(瑞薩)/IDT
1921+
SOJ-28
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
詢價(jià)
更多71256L25YG供應(yīng)商 更新時(shí)間2024-12-28 10:00:00