首頁 >71256L35YG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
71256L35YG | 包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
CMOS Static RAM 256K (32K x 8-Bit) | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT | ||
CMOSSTATICRAM256K(32Kx8-BIT) DESCRIPTION: TheIDT71256isa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh performance,high-reliabilityCMOStechnology. FEATURES: ?High-speedaddress/chipselecttime —Military:25/30/35/45/55/70/85/100/120/150ns(max.) | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
71256L35YG
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 異步
- 存儲(chǔ)容量:
256Kb(32K x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
35ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
28-BSOJ(0.300",7.62mm 寬)
- 供應(yīng)商器件封裝:
28-SOJ
- 描述:
IC SRAM 256KBIT PARALLEL 28SOJ
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Integrated Device Technology ( |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IDT, Integrated Device Technol |
24+ |
28-SOJ |
56200 |
一級代理/放心采購 |
詢價(jià) | ||
IDT |
1931+ |
N/A |
270 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
IDT |
20+ |
SOP-28 |
3854 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Renesas |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價(jià) | ||
IDT |
22+ |
NA |
270 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Integrated Device Technology |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Renesas Electronics Corporatio |
23+/24+ |
28-BSO |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
Renesas Electronics America In |
24+ |
28-BSOJ(0.300 7.62mm 寬) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) |
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