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71124

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S12YG

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S12YG8

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S15YG

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S15YG8

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S15YGI

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S15YGI8

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S20YG

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S20YG8

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S20YGI

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S20YGI8

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise. ◆Equalaccessandcycletimes –Commercial:12/15/20ns –Industrial:15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionalinputsandoutputsdirectly

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71124S12YG8

Package:32-BSOJ(0.400",10.16mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 32SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71124S15YG

Package:32-BSOJ(0.400",10.16mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 32SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71124S15YG8

Package:32-BSOJ(0.400",10.16mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 32SOJ

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

詳細(xì)參數(shù)

  • 型號(hào):

    71124

  • 制造商:

    Integrated Device Technology Inc

  • 功能描述:

    SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin SOJ Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
24+
SOJ
100
詢價(jià)
IDT
17+
SOJ
9800
只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存
詢價(jià)
IDT
1999
SOJ
100
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
詢價(jià)
TI
23+
DIP
80000
全新原裝假一賠十
詢價(jià)
IDT
50
全新原裝 貨期兩周
詢價(jià)
IDT
23+
NA
10826
專做原裝正品,假一罰百!
詢價(jià)
IDT
2018+
26976
代理原裝現(xiàn)貨/特價(jià)熱賣!
詢價(jià)
Integrated Device Technology (
2022+
1
全新原裝 貨期兩周
詢價(jià)
IDT, Integrated Device Technol
24+
32-SOJ
56200
一級(jí)代理/放心采購(gòu)
詢價(jià)
RENESAS(瑞薩)/IDT
1921+
SOJ-32
3575
向鴻倉(cāng)庫(kù)現(xiàn)貨,優(yōu)勢(shì)絕對(duì)的原裝!
詢價(jià)
更多71124供應(yīng)商 更新時(shí)間2025-1-17 16:30:00