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70V7519

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BCI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BCI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BF

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BF8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BFI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BFI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BCI

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BCI8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BF

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S166BF8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S200BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S200BC8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S200BCG

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S200BCG8

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆256Kx36SynchronousBank-SwitchableDual-ported SRAMArchitecture –64independent4Kx36banks –9megabitsofmemoryonchip ◆Bankaccesscontrolledviabankaddresspins ◆High-speeddataaccess –Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns (133MHz)(max.) –Industri

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V7519S133BC

HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號：

    70V7519

  • 功能描述：

    靜態(tài)隨機存取存儲器

  • RoHS：

    否

  • 制造商：

    Cypress Semiconductor

  • 存儲容量：

    16 Mbit

  • 組織：

    1 M x 16

  • 訪問時間：

    55 ns

  • 電源電壓-最大：

    3.6 V

  • 電源電壓-最小：

    2.2 V

  • 最大工作電流：

    22 uA

  • 最大工作溫度：

    + 85 C

  • 最小工作溫度：

    - 40 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    TSOP-48

  • 封裝：

    Tray

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
122
詢價
IDT/RENESAS
22+
BC256, BCG256
24500
瑞薩全系列在售
 詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IDT
23+
BGA
55
原裝正品現(xiàn)貨
 詢價
IDT, Integrated Device Technol
21+
119-BGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
21+
208-PQFP(28x28)
56200
一級代理/放心采購
 詢價
RENESAS(瑞薩)/IDT
1921+
CABGA-208(15x15)
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
RENESAS(瑞薩)/IDT
2117+
CABGA-256(17x17)
315000
6個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
IDT
20+
BGA-256
12
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多70V7519供應(yīng)商 更新時間2024-11-8 8:00:00

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