Features:

◆ 256K x 36 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

– 64 independent 4K x 36 banks

– 9 megabits of memory on chip

◆ Bank access controlled via bank address pins

◆ High-speed data access

– Commercial: 3.4ns(200MHz)/3.6ns (166MHz)/4.2ns

(133MHz) (max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

◆ Selectable Pipelined or Flow-Through output mode

◆ Counter enable and repeat features

◆ Dual chip enables allow for depth expansion without

additional logic

◆ Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ LVTTL- compatible, 3.3V (±150mV) power supply

for core

◆ LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV)

power supply for I/Os and control signals on each port

◆ Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

◆ Available in a 208-pin fine pitch Ball Grid Array (fpBGA)

and 256-pin Ball Grid Array (BGA)

◆ Supports JTAG features compliant with IEEE 1149.1

◆ Green parts available, see ordering information

70V7519S133BFI8屬于集成電路（IC） > 存儲(chǔ)器。瑞薩科技有限公司制造生產(chǎn)的70V7519S133BFI8存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。