首頁 >70V657S10BCG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
70V657S10BCG | HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
70V657S10BCG | HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | |
70V657S10BCG | HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | |
70V657S10BCG | 包裝：托盤 封裝/外殼：256-LBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 1.125MBIT PAR 256CABGA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆Dualchipenablesallowfordepthexpansionwithout externallogic ◆IDT70V659/58/57easilyexpandsdatabuswi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por | IDT Integrated Device Technology, Inc. | IDT | ||
HIGH-SPEED3.3V128/64/32Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM Description TheIDT70V659/58/57isahigh-speed128/64/32Kx36AsynchronousDual-PortStaticRAM.TheIDT70V659/58/57isdesignedtobeusedasastand-alone4/2/1MbitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTERSLAVEDual-Por | IDT Integrated Device Technology, Inc. | IDT |
產品屬性
- 產品編號：
70V657S10BCG
- 制造商：
Renesas Electronics America Inc
- 類別：
集成電路（IC） > 存儲器
- 包裝：
托盤
- 存儲器類型：
易失
- 存儲器格式：
SRAM
- 技術：
SRAM - 雙端口，異步
- 存儲容量：
1.125Mb（32K x 36）
- 存儲器接口：
并聯(lián)
- 寫周期時間 - 字，頁：
10ns
- 電壓 - 供電：
3.15V ~ 3.45V
- 工作溫度：
0°C ~ 70°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
256-LBGA
- 供應商器件封裝：
256-CABGA（17x17）
- 描述：
IC SRAM 1.125MBIT PAR 256CABGA
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IDT, Integrated Device Technol |
21+ |
119-BGA |
5280 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營 |
詢價 | ||
IDT, Integrated Device Technol |
21+ |
256-CABGA(17x17) |
56200 |
一級代理/放心采購 |
詢價 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
RENESAS(瑞薩)/IDT |
2117+ |
CABGA-256(17x17) |
315000 |
6個/托盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
IDT |
20+ |
BGA-256 |
12 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Integrated Device Technology |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
CABGA256(17x17) |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
Renesas Electronics Corporatio |
23+/24+ |
256-LBGA |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 |
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