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70T633S12BFI

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T633S12BFI

Package：208-LFBGA；包裝：托盤 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 208CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70T633S12BFI8

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T633S12BFI8

Package：208-LFBGA；包裝：托盤 類別：集成電路（IC） 存儲器 描述：IC SRAM 9MBIT PARALLEL 208CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

70T633S12BC

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T633S12BCG

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T633S12BCG

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T633S12BCGI

ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T633S12BCGI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T633S12BCI

HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    70T633S12BFI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 雙端口，異步

  • 存儲容量：

    9Mb（512K x 18）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    12ns

  • 電壓 - 供電：

    2.4V ~ 2.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    208-LFBGA

  • 供應(yīng)商器件封裝：

    208-CABGA（15x15）

  • 描述：

    IC SRAM 9MBIT PARALLEL 208CABGA

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
24+
SMD
324554
原裝進(jìn)口現(xiàn)貨
 詢價
IDT, Integrated Device Technol
21+
256-LBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
24+
208-CABGA(15x15)
56200
一級代理/放心采購
 詢價
IDT
1931+
N/A
1186
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
IDT
20+
BGA-208
14
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
RENESAS(瑞薩電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
IDT
22+
NA
1186
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
Integrated Device Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
IDT(Renesas收購)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
24+
N/A
46000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
更多70T633S12BFI供應(yīng)商 更新時間2025-2-1 13:30:00

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