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1.0SMB6.8A

Marking:6K8A;Package:DO-214AA;Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1.0SMB6.8CA

Marking:6K8C;Package:DO-214AA;Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

6KA21A

Marking:6KA21A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA24A

Marking:6KA24A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA33A

Marking:6KA33A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA36A

Marking:6KA36A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA48A

Marking:6KA48A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA51A

Marking:6KA51A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

6KA58A

Marking:6KA58A;Package:SMCJ;6600W Transient Voltage Suppression Diodes

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BAP64W-06

Marking:6K;Small Signal General Purpose PiN Diode

SECELECTRONICS

SEC Electronics Inc.

BUK6D30-40E

Marking:6K;Package:DFN2020MD-6;40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?Sidewettableflanksforo

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

D20V0S1U2LP20-7

Marking:6K;Package:U-DFN2020-2;1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV ?OneChannelsofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) Applications ?CellularHa

DIODES

Diodes Incorporated

DTA406

Marking:6K;Package:SOT-323;Bias Resistor Transistors

FS

First Silicon Co., Ltd

DTA606

Marking:6K;Package:SC-89;Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

FS

First Silicon Co., Ltd

LDTA143ZET1G

Marking:6K;Package:SC-89;Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LDTA143ZET1G

Marking:6K;Package:SC-89;Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMUN5133T1G

Marking:6K;Package:SOT-323;Bias Resistor Transistor

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MM1Z91

Marking:6K;Silicon planar zener diode in a small plastic

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

NHUMH13

Marking:6K;Package:C-88;80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NHUMH13

Marking:6K;Package:SC-88;80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH102.247NH

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    6K

  • 功能描述:

    電源變壓器 POWER TX 50/60HZ

  • RoHS:

  • 制造商:

    Triad Magnetics

  • 功率額定值:

    12 VA

  • 初級電壓額定值:

    115 V/230 V

  • 次級電壓額定值:

    12 V/24 V

  • 安裝風(fēng)格:

    SMD/SMT

  • 一次繞組:

    Dual Primary Winding

  • 二次繞組:

    Dual Secondary Winding

  • 長度:

    2.5 in

  • 寬度:

    2 in

  • 高度:

    1.062 in

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加我QQ或微信咨詢更多詳細(xì)信息,
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更多6K供應(yīng)商 更新時間2025-1-18 9:30:00