| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：65R072M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCa M1 SiC Trench Power Device Features ?Optimizedswitchingbehaviorathighercurrents ?CommutationrobustfastbodydiodewithlowQf ?Superiorgateoxidereliability ?Tj,max=175°Candexcellentthermalbehavior ?LowerRDS(on)andpulsecurrentdependencyontemperature ?Increasedavalanchecapability ?Compatib | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R072M1；Package：PG-TO263-7-12；650 V CoolSiC? M1 SiC Trench Power Device | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R072M1；Package：PG-TO247-3；650 V CoolSiC? M1 SiC Trench Power Device | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R072M1；Package：PG-TO247-4-3；650 V CoolSiC? M1 SiC Trench Power Device | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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