| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：65R040M2；Package：PG-TO263-7；MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R040M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R040M2；Package：PG-HSOF-8；CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R040M2；Package：PG-LHSOF-4；SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ?Ultra?lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn?onevenwith0Vturn?offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R040M2；Package：PG-TO247-3；MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65R040M2；Package：PG-TO247-4；MOSFET CoolSiCa MOSFET 650 V G2 Features ?Ultra-lowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage ?Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme ?Robustbodydiodeoperationunderhardcommutationevents ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|
