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CPH5852

MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features ?CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. ?[MOS] ?LowON-resistance ?Ultrahigh-speedswitching ?4Vdrive ?[SBD]

SANYOSanyo Semicon Device

三洋三洋電機株式會社

IRF5852

PowerMOSFET(Vdss=20V)

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852PBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TR

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

IRF5852TRPBF

UltraLowOn-Resistance

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

IRF

International Rectifier

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

ISO5852S

High-CMTI2.5-A/5-AIsolatedIGBT,MOSFETGateDriverwithSplitOutputsandActiveSafetyFeatures

TITexas Instruments

德州儀器美國德州儀器公司

ISO5852S

High-CMTI2.5-Aand5-AReinforcedIsolatedIGBT,MOSFETGateDriverWithSplitOutputsandActiveProtectionFeatures

TI1Texas Instruments

德州儀器

詳細參數(shù)

  • 型號：

    5852S

  • 制造商：

    Cooper Wiring Devices

供應商型號品牌批號封裝庫存備注價格
Alpha
22+
NA
6878
加我QQ或微信咨詢更多詳細信息,
 詢價
Alpha Wire
24+
con
49
優(yōu)勢庫存,原裝正品
 詢價
AlphaWire
新
13
全新原裝 貨期兩周
 詢價
Alpha Wire
2022+
9
全新原裝 貨期兩周
 詢價
SSC
23+
SOT23-8
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
臺產(chǎn)
2023+
DFN2X3-8L
8700
原裝現(xiàn)貨
 詢價
ALPHA WIRE
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價
TE/泰科
24+
19373
原廠現(xiàn)貨渠道
 詢價
TE/泰科
2452+
/
287692
一級代理,原裝正品現(xiàn)貨
 詢價
TYCO
23+
NA
12550
振宏微原裝正品,假一罰百
 詢價
更多5852S供應商 更新時間2025-3-19 10:08:00

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