零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
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4N100-FC | null4.0A, 1000V N-CHANNEL POWER MOSFET ?DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A *LowReverseTransferCapacitance *FastSwitchingCapabi | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHiperFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped | IXYS IXYS Corporation | IXYS | ||
HiperFETPowerMOSFETsQ-Class | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETQ-Class | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFET FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
UTC |
21+ |
TO-252 T/R |
20000 |
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展 |
詢價 | ||
UTC/友順 |
2022+ |
TO-220 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
UTC/友順 |
23+ |
TO-220 |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
UTC/友順 |
23+ |
TO-220 |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
UTC/友順 |
23+ |
TO-252 |
97499 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳 |
詢價 | ||
UTC |
20232024 |
TO252 |
6000 |
老牌代理,長期現(xiàn)貨 |
詢價 | ||
UTC/友順 |
24+ |
TO220 |
100000 |
原裝現(xiàn)貨 |
詢價 | ||
UTC(友順) |
2112+ |
TO-220F1 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
UTC/友順 |
23+ |
TO-220F1 |
22820 |
原裝正品,支持實單 |
詢價 | ||
24+ |
N/A |
51000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |