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首頁 >DAM4N100L>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
DAM4N100L	文件：257.35 Kbytes Page：4 Pages	N-Channel Enhancement Mode MOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
IXFA4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFA4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFA4N100P	文件：333.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFA4N100Q	文件：333.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFA4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped	IXYS IXYS Corporation	IXYS
IXFH4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS
IXFH4N100Q	文件：90.61 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS
IXFH4N100Q	文件：372.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFP4N100	文件：295.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFP4N100P	文件：332.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFP4N100P	文件：270.9 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100P	文件：157.57 Kbytes Page：4 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100PM	文件：121.78 Kbytes Page：4 Pages	PolarHiperFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFP4N100Q	文件：79.37 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped	IXYS IXYS Corporation	IXYS
IXFP4N100Q	文件：149.11 Kbytes Page：4 Pages	HiperFETPowerMOSFETsQ-Class	IXYS IXYS Corporation	IXYS
IXFP4N100QM	文件：116.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETQ-Class	IXYS IXYS Corporation	IXYS
IXFR4N100Q	文件：370.08 Kbytes Page：3 Pages	N-ChannelMOSFET FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR4N100Q	文件：81.23 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFT4N100	文件：94.26 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	DAM50727-465M	MIT	24+	SOP7.2mm	450		詢價(jià)
深圳市佳鑫美電子科技有限公司	DAM50727-465M		24+	SSOP	5000	絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!	詢價(jià)
深圳市富芯樂電子科技有限公司	DAM50727-465M	MIT	22+	SOP7.2MM	450	全新原裝現(xiàn)貨	詢價(jià)
深圳芯力源電子科技有限公司	DAM50727-465M	N/A	23+	SSOP	5177	現(xiàn)貨	詢價(jià)
上海金慶電子技術(shù)有限公司	DAM53512-1379		新		50	全新原裝貨期兩周	詢價(jià)
深圳市科雨電子有限公司	DAM53512-1818	ITT	20+	連接器	493	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市德正通電子有限公司	D-AM6N1125FLA8-7-55	DIODES	23+		10000	原裝正品現(xiàn)貨,德為本,正為先,通天下!	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	DAM72AM1XBJ3	TOSHIBA	23+		3880	正品原裝貨價(jià)格低qq:2987726803	詢價(jià)
深圳市星佑電子有限公司	DAM771626	ITTCANNON	05+	原廠原裝	4413	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市明嘉萊科技有限公司	DAM7H2SNA197	ITT INDUSTRIES	22+	SMD	518000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)

更多DAM4N100L供應(yīng)商更新時(shí)間2024-12-28 16:30:00

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