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首頁 >2SD213>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
2SD213	文件：263.67 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
2SD2130	文件：218.48 Kbytes Page：4 Pages	NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications ●HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ●Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A,IB=10mA) ●Zenerdiodeincludedbetweencollectorandbase.	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SD2131	文件：228.5 Kbytes Page：4 Pages	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) High-PowerSwitchingApplications HammerDrive,PulseMotorDriveApplications ?HighDCcurrentgain:hFE=2000(min)(VCE=3V,IC=3A) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=3A) ?Zenerdiodeincludedbetweencollectorandbase. ?Unclampedinductiveloadenergy:E=	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
2SD2133	文件：96.03 Kbytes Page：4 Pages	Silicon NPN epitaxial planar type SiliconNPNepitaxialplanartype Forlow-frequencypoweramplificationdriver ■Features ?Lowcollector-emittersaturationvoltageVCE(sat)	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2134	文件：81.86 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type Forlow-frequencydriver/highpoweramplification Complementaryto2SD2134 ■Features ?ExcellentcurrentICcharacteristicsofforwardcurrenttransferratiohFEvs.collector ?HightransitionfrequencyfT ?Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2136	文件：86.32 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type Forpoweramplification Complementaryto2SB1416 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingsupplywiththeradialtaping	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2136	文件：82.07 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2136	文件：114.96 Kbytes Page：3 Pages	POWER TRANSISTOR POWERTRANSISTOR DESCRIPTION TheUTC2SD2136isdesignedforpoweramplification. FEATURES HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. LowcollectortoemittersaturationvoltageVCE(SAT). *Allowingsupplywiththeradialtaping.	UTCUnisonic Technologies 友順友順科技股份有限公司	UTC
2SD2136	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SD2136	文件：126.94 Kbytes Page：1 Pages	TRANSISTOR (NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司	WINNERJOIN
2SD2136	文件：1.30854 Mbytes Page：4 Pages	TO-126 Plastic-Encapsulate Transistors FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping	DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司	DGNJDZ
2SD2136-P	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SD2136-Q	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SD2136-R	文件：258.62 Kbytes Page：2 Pages	NPN Plastic Encapsulated Transistor FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SD2136-TU	文件：1.30854 Mbytes Page：4 Pages	TO-126 Plastic-Encapsulate Transistors FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping	DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司	DGNJDZ
2SD2137	文件：54.7 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type(For power amplification) SiliconNPNtriplediffusionplanartype Forpoweramplification,Complementaryto2SB1417and2SB1417A Features 1.HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity 2.LowcollectortoemittersaturationvoltageVCE(sat) 3.Allowingsupplywithther	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2137	文件：55.11 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type(For power amplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2137	文件：1.025079 Mbytes Page：3 Pages	TO-220-3L Plastic-Encapsulate Transistors FEATURES HighForwardCurrentTransferRatiohFEwhichHas SatisfactoryLinearity LowCollectortoEmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping	DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司	DGNJDZ
2SD2137A	文件：55.11 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type(For power amplification) SiliconPNPepitaxialplanartype Forpoweramplification Complementaryto2SD2137and2SD2137A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic
2SD2137A	文件：54.7 Kbytes Page：3 Pages	Silicon NPN triple diffusion planar type(For power amplification) SiliconNPNtriplediffusionplanartype Forpoweramplification,Complementaryto2SB1417and2SB1417A Features 1.HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity 2.LowcollectortoemittersaturationvoltageVCE(sat) 3.Allowingsupplywithther	PanasonicPanasonic Semiconductor 松下松下電器	Panasonic

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晶體管資料

型號：
2SD213
別名：
三極管、晶體管、晶體三極管
生產(chǎn)廠家：
制作材料：
Si-NPN
性質(zhì)：
低頻或音頻放大（LF）_開關(guān)管（S）_功率放大（L
封裝形式：
貼片封裝
極限工作電壓：
110V
最大電流允許值：
10A
最大工作頻率：
<1MHZ或未知
引腳數(shù)：
2
可代換的型號：
BDW21C,BDX11,BDY19,BDY74,2N3055,2N3442,2N3773,2N5632,2N5633,3DA74C,
最大耗散功率：
100W
放大倍數(shù)：
圖片代號：
E-44
vtest：
110
htest：
999900
atest：
10
wtest：
100

詳細參數(shù)

型號：
2SD213
功能描述：
2SD213 SIL N9H1D

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導(dǎo)體有限公司	2SD213		24+	TO-3	10000	全新	詢價
深圳市科恒偉業(yè)電子有限公司	2SD213	SK	1738+	TO-3	8529	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價
深圳市旺財半導(dǎo)體有限公司	2SD213	TOS	23+	TO	20000	正品原裝貨價格低	詢價
深圳市聯(lián)世界科技有限公司	2SD2137Q	PANASONIC			1000	原裝正品現(xiàn)貨庫存價優(yōu)	詢價
深圳市弘為電子有限公司	2SD2132	ROHM	24+	原廠封裝	2500	原裝現(xiàn)貨假一罰十	詢價
深圳市利加科技有限公司	2SD2137T	TOSHIBA	16+	TO-220	10000	全新原裝現(xiàn)貨	詢價
深圳市博浩通科技有限公司	2SD21390PA	PANASONIC	23+	MT-4	7750	全新原裝優(yōu)勢	詢價
深圳市卓越微芯電子有限公司	2SD2130	TOSHIBA	2020+	TO-126	1800	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市勤思達科技有限公司	2SD2137A	松下PANASO	15+	TO-220	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價
深圳市鵬和科技有限公司	2SD2137-P(TA)	PANASONIC	24+	TO-220F	5000	只做原裝公司現(xiàn)貨	詢價

更多2SD213供應(yīng)商更新時間2025-1-13 10:20:00

晶體管資料

詳細參數(shù)

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