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2SD2136-TU

TO-126 Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SD2136

POWERTRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD2136

POWERTRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SD2136isdesignedforpoweramplification. FEATURES *HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. *LowcollectortoemittersaturationvoltageVCE(SAT). *Allowingsupplywiththeradialtaping.

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD2136

SiliconPNPepitaxialplanartype

Forlow-frequencypoweramplification Complementaryto2SD2136 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingautomaticinsertionwithradialtaping

PanasonicPanasonic Semiconductor

松下松下電器

2SD2136

SiliconNPNtriplediffusionplanartype

Forpoweramplification Complementaryto2SB1416 ■Features ?HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity. ?Lowcollector-emittersaturationvoltageVCE(sat) ?Allowingsupplywiththeradialtaping

PanasonicPanasonic Semiconductor

松下松下電器

2SD2136

POWERTRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

2SD2136

TO-126Plastic-EncapsulateTransistors

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SD2136

NPNPlasticEncapsulatedTransistor

FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2136

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SD2136

TO-126Plastic-EncapsulateTransistors

FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SD2136

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

2SD2136-P

NPNPlasticEncapsulatedTransistor

FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2136-Q

NPNPlasticEncapsulatedTransistor

FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2136-R

NPNPlasticEncapsulatedTransistor

FEATURES ●Lowfrequencypoweramplifier ●LowCollector-EmitterSaturationVoltageVCE(sat) ●HighForwardCurrentTransferRatiohFEWhichhasSatisfactoryLinearity CollectortoBaseVoltageVCBO60V CollectortoEmitterVoltageVCEO60V EmittertoBaseVoltageVEBO6V CollectorCurrent

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
三洋
24+
3692
詢價
MAT
24+
原廠封裝
1700
原裝現(xiàn)貨假一罰十
 詢價
松下PANASO
23+
TO-220
3000
全新原裝
 詢價
松下PANASO
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
長電
22+23+
TO-220-3L
23661
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
PANASONIC
MT-3-A1
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
CJ
20+
TO220
32970
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
PANASONIC/松下
22+
MT-3-A1
20000
保證原裝正品,假一陪十
 詢價
PAN/松下
21+
TO-220
400
原裝現(xiàn)貨假一賠十
 詢價
PANASONIC/松下
23+
TO-220F
10000
公司只做原裝正品
 詢價
更多2SD2136-TU供應(yīng)商 更新時間2025-1-13 14:30:00

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