零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SC3356 | MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0GHz ?High | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | |
2SC3356 | isc Silicon NPN RF Transistor DESCRIPTION ·LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ·HighPowerGain MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz APPLICATIONS ·DesignedforlownoiseamplifieratVHF,UHFandCATVband. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
2SC3356 | NPN Silicon Epitaxial Transistor Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | |
2SC3356 | High-Frequency Amplifier Transistor NPN Silicon FEATURES *LownoiseamplifieratVHF,UHFandCATVband. *LowNoiseandHighGain *HighPowerGain | WEITRON Weitron Technology | WEITRON | |
2SC3356 | NPN Silicon Plastic-Encapsulate Transistor FEATURES ?PowerDissipation ?RoHSCompliantProduct | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
2SC3356 | TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司 | HTSEMI | |
2SC3356 | HIGH FREQUENCY LOW NOISE AMPLIFIER HIGHFREQUENCYLOWNOISEAMPLIFIER ■DESCRIPTION TheUTC2SC3356isdesignedforsuchapplicationsas:DC/DCconverters,supplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.r | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | |
2SC3356 | NPN Silicon RF Transistor NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold *Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz *Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA,f=1GHz | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
2SC3356 | SOT-23 High-FrequencyAmplifierTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壯桂微電子有限責(zé)任公司 | GSME | |
2SC3356 | TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | |
2SC3356 | TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導(dǎo)體美科半導(dǎo)體股份(香港)有限公司 | MAKOSEMI | |
2SC3356 | NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold NPNSiliconRFTransistor NPNEpitaxialSiliconRFTransistorforMicrowaveLow-NoiseAmplification3-pinMinimold FEATURES ?Lownoiseandhighgain:NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1GHz ?Highpowergain:MAG=13dBTYP.@VCE=10V,IC=20mA, | CEL California Eastern Labs | CEL | |
2SC3356 | Low Noise and High Gain DESCRIPTION The2SC3356isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithasdynamicrangeandgoodcurrentcharacteristic. FEATURES ?LowNoiseandHighGain NF=1.1dBTYP.,Ga=11dBTYP.@VCE=10V,IC=7mA,f=1.0 | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | |
2SC3356 | Silicon NPN transistor in a SOT-23 Plastic Package Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lownoiseandhighpowergain. Applications lownoiseamplifieratVHF,UHFandCATVbandapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | |
2SC3356 | NPN Transistors Features ●Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | |
2SC3356 | NPN Silicon RF Transistor FEATURES ?LownoiseamplifieratVHF,UHFandCATVband. ?LowNoiseandHighGain ?HighPowerGain | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實(shí)業(yè)有限公司 | SKTECHNOLGY | |
2SC3356 | It is an ultra-high-frequency low-noise transistor, using planar NPN silicon outside Description 2SC3356isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside. Extendedbipolarprocess.Ithashighpowergain,lownoisefigure,largedynamicrangeandidealcurrentcharacteristics. Use SOT-23/SC-59SMDpackage,mainlyusedinVHF,UHFandCATVhi | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | |
2SC3356 | NPN Transistors Features Lownoiseandhighgain. NF=1.1dBTyp.,Ga=11dBTyp.@VCE=10V,IC=7mA,f=1.0GHz Highpowergain. MAG=13dBTyp.@VCE=10V,IC=20mA,f=1.0GHz | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | |
2SC3356 | Silicon Epitaxial Planar Transistor FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband. | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | |
2SC3356 | Silicon Epitaxial Planar Transistor FEATURES ●Lownoiseandhighgain. NF=1.1dBTYP.,Ga=11dBTYP. @VCE=10V,IC=7mA,f=1.0GHz ●Highpowergain.MAG=13dBTYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS ●DesignedforlownoiseamplifieratVHF,UHFandCATVband. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
超高頻/特高頻 (UHF)
- 封裝形式:
貼片封裝
- 極限工作電壓:
20V
- 最大電流允許值:
0.1A
- 最大工作頻率:
7GHZ
- 引腳數(shù):
3
- 可代換的型號:
2SC3513,2SC3606,2SC3829,
- 最大耗散功率:
0.2W
- 放大倍數(shù):
- 圖片代號:
H-15
- vtest:
20
- htest:
7000000000
- atest:
0.1
- wtest:
0.2
詳細(xì)參數(shù)
- 型號:
2SC3356
- 制造商:
Panasonic Industrial Company
- 功能描述:
TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
SMD |
618000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | |||
SOT-23 |
14 |
NEC |
6000 |
原裝正品現(xiàn)貨 |
詢價 | ||
ON |
18+ |
SOT23 |
30000 |
ON專營→可提供17發(fā)票 |
詢價 | ||
NEC |
2021+ |
SOT-23 |
5980 |
只做原裝,優(yōu)勢渠道,可全系列訂貨開增值稅票 |
詢價 | ||
NEC |
14+無鉛 |
SOT-23 |
25700 |
優(yōu)勢產(chǎn)品,博盛微熱賣!!! |
詢價 | ||
CJ/長電 |
21+ |
10560 |
十年專營,原裝現(xiàn)貨,假一賠十 |
詢價 | |||
CJ/長晶 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
CEL |
2024+ |
SOT-23 |
32560 |
原裝優(yōu)勢絕對有貨 |
詢價 | ||
CJ/長晶 |
24+ |
SOT-23 |
30000 |
長晶全系列二三極管原裝優(yōu)勢供應(yīng),歡迎詢價 |
詢價 | ||
NEC(日電電子) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價 |
相關(guān)規(guī)格書
更多- 2SC3357
- 2SC3359(S)
- 2SC3360
- 2SC3362
- 2SC3364
- 2SC3366
- 2SC3368
- 2SC337
- 2SC3371
- 2SC3373
- 2SC3375
- 2SC3377
- 2SC3379
- 2SC3380
- 2SC3382
- 2SC3384
- 2SC3386
- 2SC3388
- 2SC339
- 2SC3391
- 2SC3393
- 2SC3395
- 2SC3397
- 2SC3399
- 2SC340
- 2SC3401
- 2SC3403
- 2SC3405
- 2SC3407
- 2SC3409
- 2SC3410
- 2SC3412
- 2SC3414
- 2SC3416
- 2SC3418
- 2SC342
- 2SC3421
- 2SC3423
- 2SC3425
- 2SC3427
- 2SC3429
- 2SC3430
- 2SC3432
- 2SC3434
- 2SC3436
相關(guān)庫存
更多- 2SC3358
- 2SC336
- 2SC3361
- 2SC3363
- 2SC3365
- 2SC3367
- 2SC3369
- 2SC3370
- 2SC3372
- 2SC3374
- 2SC3376
- 2SC3378
- 2SC338
- 2SC3381
- 2SC3383
- 2SC3385
- 2SC3387
- 2SC3389
- 2SC3390
- 2SC3392
- 2SC3394
- 2SC3396
- 2SC3398
- 2SC34
- 2SC3400
- 2SC3402
- 2SC3404
- 2SC3406
- 2SC3408
- 2SC341
- 2SC3411
- 2SC3413
- 2SC3415
- 2SC3417
- 2SC3419
- 2SC3420
- 2SC3422
- 2SC3424
- 2SC3426
- 2SC3428
- 2SC343
- 2SC3431
- 2SC3433
- 2SC3435
- 2SC3437