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2SC1940

NPN SILICON TRANSISTOR

DESCRIPTION The2SC1940isdesignedforusedriverstagesofaudiofrequencyamplifiers.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC1940

NPN SILICON TRANSISTOR

DESCRIPTION The2SC1940isdesignedforusedriverstagesofaudiofrequencyamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1941

NPN SILICON TRANSISTOR

DESCRIPTION The2SC1941isdesignedforusedriverstagesofaudiofrequencyamplifiers.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SC1942

HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT

SILICONNPNTRIPLEDIFFUSED HIGHVOLTAGEPOWERSWITCHINGTVHORIZONTALDEFLECTIONOUTPUT

HitachiHitachi Semiconductor

日立日立公司

2SC1942

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Highbreakdownvoltage ?Highspeedswitching APPLICATIONS ?ForTVhorizontaloutputapplications

SAVANTIC

Savantic, Inc.

2SC1942

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Highbreakdownvoltage ?Highspeedswitching APPLICATIONS ?ForTVhorizontaloutputapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SC1942

Silicon NPN Power Transistors

DESCRIPTION ?WithTO-3package ?Highbreakdownvoltage ?Highspeedswitching APPLICATIONS ?ForTVhorizontaloutputapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SC1942

Silicon NPN Power Transistor

DESCRIPTION ?HighVoltage-VCEx=1500V(Min.) ?CollectorCurrent-lc=3.0A APPLICATIONS ?Designedforuseinlargescreencolordeflectioncircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1944

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

DESCRIPTION 2SC1944isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications. APPLICATIONS 10to14WoutputpowerclassABamplifiersinHFband.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體（Mitsubishi Electric Semiconductor）

2SC1945

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體（Mitsubishi Electric Semiconductor）

2SC1946

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersapplicationsinVHFband.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體（Mitsubishi Electric Semiconductor）

2SC1946

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersapplicationsinVHFband.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1946A

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體（Mitsubishi Electric Semiconductor）

2SC1946A

NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1946A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The2SC1946AisDesignedfor12.5V175MHzLarge-SignalPowerAmplifierApplications. FEATURESINCLUDE: ?HighCommonEmitterPowerGain ?OutputPower=30W

ASI

Advanced Semiconductor

2SC1947

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947isasiliconNPNepitaxialplanartypetransistordesignedforindustrialuseRFpoweramplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10.7dB @VCC=13.5V,PO=3.5W,f=175MHz ●TO-39metalseeledpackageforhighreliability. ●Em

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機半導體（Mitsubishi Electric Semiconductor）

2SC1947

HIGH POWER TRANSISTOR SILICON NPN

HIGHPOWERTRANSISTORSILICONNPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1940_13

The 2SC1940 is designed for use in driver stages of audio frequency amplifiers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

2SC1942

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

2SC1942_15

Silicon NPN Power Transistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

詳細參數(shù)

  • 型號：

    2SC194

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
HITACHI
24+
60000
詢價
NEC
500
TO-92
37
1914+
 詢價
22+
20000
保證原裝正品,假一陪十
 詢價
NEC
21+
TO-92
489
原裝現(xiàn)貨假一賠十
 詢價
NEC
22+
TO-92
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
NEC
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
23+
4000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
NEC
22+
TO-92
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
NEC
02+
TO-92
489
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
22+
100000
代理渠道/只做原裝/可含稅
 詢價
更多2SC194供應商 更新時間2024-11-5 16:30:00

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