2SC2001-L

NPN Silicon Plastic-Encapsulate Transistor

Features ?Capableof0.6WattsofPowerDissipation. ?Collector-current0.7A ?Collector-baseVoltage30V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Marking:C2001 ?LeadFreeFinish/Rohs

2SC2001-L

NPN Silicon Plastic-Encapsulate Transistor

2SC2001-L-AP

包裝：帶盒（TB） 封裝/外殼：TO-226-3，TO-92-3（TO-226AA）成形引線 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 25V 0.7A TO92

2SC2001

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplications.

2SC2001

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2001isdesignedforuseinoutputstateofportableRADIOandcassettetypetaperecorder,generalpurposeapplications.

2SC2001

NPNPlasticEncapsulatedTransistor

FEATURES ●HighhFEandlowVCE(sat) hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ)

2SC2001

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2001

MediumPowerAmplifiersandSwitches

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC2001

TO-92Plastic-EncapsulateTransistors

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC2001

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2001

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFEandLowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

2SC2001

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Hightotalpowerdissipation,lowVCE(sat)andhighhFE. Applications Outputstageofportableradioandcassettetypetaperecorder,generalpurposeapplications.

2SC2001

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ?HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

2SC2001-K

NPNSiliconPlastic-EncapsulateTransistor

2SC2001-K

NPNSiliconPlastic-EncapsulateTransistor

Features ?Capableof0.6WattsofPowerDissipation. ?Collector-current0.7A ?Collector-baseVoltage30V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Marking:C2001 ?LeadFreeFinish/Rohs

2SC2001-M

NPNSiliconPlastic-EncapsulateTransistor

2SC2001-M

NPNSiliconPlastic-EncapsulateTransistor

Features ?Capableof0.6WattsofPowerDissipation. ?Collector-current0.7A ?Collector-baseVoltage30V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Marking:C2001 ?LeadFreeFinish/Rohs

ST2SC2001

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintothreegroups,O,Y andG,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.