零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR AudioFrequencyPowerAmplifier | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
Silicon PNP Power Transistors DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
Silicon PNP Power Transistors DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier. | SAVANTIC Savantic, Inc. | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
Silicon PNP Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEo=-130V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC3012 APPLICATIONS ?Foraudiofrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1235isaminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax(@Ic=-100mA,IB=-10mA) ●Excellent | ISAHAYAIsahaya Electronics Corporation 諫早電子諫早電子株式會(huì)社 | ISAHAYA | ||
Silicon PNP Epitaxial Features Smallcollectortoemittersaturationvoltage. ExcelentlinearyDCforwardcurrentgain. Superminipackageforeasymounting. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
TRANSISTOR (PNP) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
TRANSISTOR(PNP) FEATURES LowCollectorCurrent LowCollectorPowerDissipation | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司 | HTSEMI | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES ?LowCollectorCurrent ?LowCollectorPowerDissipation | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
PNP TRANSISTOR [DONGGUANSHIHUAYUANELECTRONCO.,LTD.] TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃t | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
Plastic-Encapsulated Transistors FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
Silicon Epitaxial Planar Transistor FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication. | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ?Superminipackageforeasymounting ?ExcellentlinearityofDCforwardgain ?Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli | ISAHAYAIsahaya Electronics Corporation 諫早電子諫早電子株式會(huì)社 | ISAHAYA | ||
PNP Silicon Plastic Encapsulated Transistor FEATURES LowCollectorCurrent LowCollectorPowerDissipation | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PNP epitaxial type transistor designed for low frequency. FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
Plastic-Encapsulate Transistors Features ?LowCollectorCurrent ?LowCollectorPowerDissipation | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
DIFFERENTIAL AMP APPLICATIONS DifferentialAmpApplications | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
DIFFERENTIAL AMP APPLICATIONS
| SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
130V
- 最大電流允許值:
10A
- 最大工作頻率:
60MHZ
- 引腳數(shù):
3
- 可代換的型號(hào):
2SA1146,2SA1186,2SA1227(A),2SA1386(A),2SB817,
- 最大耗散功率:
100W
- 放大倍數(shù):
- 圖片代號(hào):
B-62
- vtest:
130
- htest:
60000000
- atest:
10
- wtest:
100
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
24+ |
TOP-3FA |
10000 |
全新 |
詢(xún)價(jià) | |||
NEC |
2020+ |
TO-3P |
106 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ISC |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢(xún)價(jià) | ||
NEC |
24+ |
TO-3P |
6430 |
原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún) |
詢(xún)價(jià) | ||
SPTECH |
2112+ |
TO-3PN |
105000 |
30個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期 |
詢(xún)價(jià) | ||
NEC |
21+ |
TO-3P |
13 |
原裝現(xiàn)貨假一賠十 |
詢(xún)價(jià) | ||
NEC |
23+ |
TO-3P |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
NEC |
2022 |
TO-3P |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
NEC |
06+ |
TO-3P |
13 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
NEC |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- 2SA1233
- 2SA1235
- 2SA1237
- 2SA1239
- 2SA1240
- 2SA1242
- 2SA1244
- 2SA1246
- 2SA1248
- 2SA125
- 2SA1251
- 2SA1253
- 2SA1255
- 2SA1257
- 2SA1259
- 2SA1260
- 2SA1262
- 2SA1264
- 2SA1266
- 2SA1268
- 2SA127
- 2SA1271
- 2SA1273
- 2SA1275
- 2SA1277
- 2SA1279
- 2SA1280
- 2SA1282(A)
- 2SA1284
- 2SA1285A
- 2SA1287
- 2SA1289
- 2SA1290
- 2SA1292
- 2SA1294
- 2SA1296
- 2SA1298
- 2SA12H
- 2SA130
- 2SA1301
- 2SA1303
- 2SA1305
- 2SA1306A
- 2SA1307
- 2SA1309
相關(guān)庫(kù)存
更多- 2SA1234
- 2SA1236
- 2SA1238
- 2SA124
- 2SA1241
- 2SA1243
- 2SA1245
- 2SA1247
- 2SA1249
- 2SA1250
- 2SA1252
- 2SA1254
- 2SA1256
- 2SA1258
- 2SA126
- 2SA1261
- 2SA1263
- 2SA1265
- 2SA1267
- 2SA1269
- 2SA1270
- 2SA1272
- 2SA1274
- 2SA1276
- 2SA1278
- 2SA128
- 2SA1281
- 2SA1283
- 2SA1285
- 2SA1286
- 2SA1288
- 2SA129
- 2SA1291
- 2SA1293
- 2SA1295
- 2SA1297
- 2SA1299
- 2SA13
- 2SA1300
- 2SA1302
- 2SA1304
- 2SA1306
- 2SA1306B
- 2SA1308
- 2SA1309A