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2SA1232

PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR

AudioFrequencyPowerAmplifier

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

2SA1232

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

2SA1232

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier.

SAVANTIC

Savantic, Inc.

2SA1232

Silicon PNP Power Transistors

DESCRIPTION ?WithTO-3PFapackage ?Complementtotype2SC3012 APPLICATIONS ?Audiofrequencypoweramplifier.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

2SA1232

Silicon PNP Power Transistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEo=-130V(Min) ?GoodLinearityofhFE ?ComplementtoType2SC3012 APPLICATIONS ?Foraudiofrequencypoweramplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SA1235

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA1235isaminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. . FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.3Vmax(@Ic=-100mA,IB=-10mA) ●Excellent

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SA1235

Silicon PNP Epitaxial

Features Smallcollectortoemittersaturationvoltage. ExcelentlinearyDCforwardcurrentgain. Superminipackageforeasymounting.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SA1235A

TRANSISTOR (PNP)

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SA1235A

SOT-23 Plastic-Encapsulate Transistors

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SA1235A

TRANSISTOR(PNP)

FEATURES LowCollectorCurrent LowCollectorPowerDissipation

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

2SA1235A

SOT-23 Plastic-Encapsulate Transistors

FEATURES ?LowCollectorCurrent ?LowCollectorPowerDissipation

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

2SA1235A

PNP TRANSISTOR

[DONGGUANSHIHUAYUANELECTRONCO.,LTD.] TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃t

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

2SA1235A

Plastic-Encapsulated Transistors

FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SA1235A

Silicon Epitaxial Planar Transistor

FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA1235A

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FORLOWFREQUENCYAMPLIFYAPPLICATION FEATURE ?Superminipackageforeasymounting ?ExcellentlinearityofDCforwardgain ?Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax APPLICATION ForHybridIC,smalltypemachinelowfrequencyvoltageAmplifyappli

ISAHAYAIsahaya Electronics Corporation

諫早電子諫早電子株式會(huì)社

2SA1235A

PNP Silicon Plastic Encapsulated Transistor

FEATURES LowCollectorCurrent LowCollectorPowerDissipation

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SA1235A

PNP epitaxial type transistor designed for low frequency.

FEATURES ●Smallcollectortoemittersaturationvoltage VCE(sat)=-0.3Vmax(@IC=-100mA,IB=-10mA). ●ExcellentlinearyDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●PNPepitaxialtypetransistordesignedforlowfrequency. ●Voltageamplifyapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

2SA1235A

Plastic-Encapsulate Transistors

Features ?LowCollectorCurrent ?LowCollectorPowerDissipation

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

2SA1237

DIFFERENTIAL AMP APPLICATIONS

DifferentialAmpApplications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

2SA1238

DIFFERENTIAL AMP APPLICATIONS

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

晶體管資料

  • 型號(hào):

    2SA1232

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    130V

  • 最大電流允許值:

    10A

  • 最大工作頻率:

    60MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    2SA1146,2SA1186,2SA1227(A),2SA1386(A),2SB817,

  • 最大耗散功率:

    100W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-62

  • vtest:

    130

  • htest:

    60000000

  • atest:

    10

  • wtest:

    100

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
TOP-3FA
10000
全新
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NEC
2020+
TO-3P
106
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢(xún)價(jià)
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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NEC
24+
TO-3P
6430
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SPTECH
2112+
TO-3PN
105000
30個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
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NEC
21+
TO-3P
13
原裝現(xiàn)貨假一賠十
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NEC
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NEC
2022
TO-3P
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
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NEC
06+
TO-3P
13
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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NEC
589220
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更多2SA123供應(yīng)商 更新時(shí)間2024-12-29 16:00:00