首頁 >2SA1162S-Y-LF>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
2SA1162S-Y-LF | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
TRANSISTOR(PNP) FEATURES .Lownoise:NF=1dB(Typ.),10dB(Max.) .Complementaryto2SC2712. .SmallPackage. MARKING:SO,SY,SG | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司 | HTSEMI | ||
PNPSiliconGeneralPurposeTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PNPSiliconGeneralPurposeTransistor FEATURES ?LowNoise:NF=1dB(Typ.),10dB(Max.) ?Complementsofthe2SC2712 MECHANICALDATA ?Case:SOT-23,MoldedPlastic ?Weight:0.008grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication. | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
Plastic-EncapsulateTransistors FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
PNPEPITAXIALSILICONTRANSISTOR PNPEPITAXIALSILICONTRANSISTOR LOWFREQRENCY,LOWNOISEAMPLIFIER ?Complemento2SC2712 ?Collector-current:Ic=-100mA Collector-EmillerVoltage:VCE=-45V | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
PNPGeneralPurposeTransistor FEATURES PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壯桂微電子有限責(zé)任公司 | GSME | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lownoise ●Complementaryto2SC2712 ●SmallPackage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
NewJerseySemi-ConductorProducts, NewJerseySemi-ConductorProducts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風(fēng)微電子廣東佑風(fēng)微電子有限公司 | YFWDIODE | ||
SiliconPNPEpitaxialTypeTransistor | BWTECH Bruckewell Technology LTD | BWTECH |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
13+ |
SOT23 |
1500 |
全新原裝只做自己庫存只做原裝 |
詢價(jià) | ||
Toshiba Semiconductor and Stor |
24+ |
TO-236-3 SC-59 SOT-23-3 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
TOSHIBA |
99 |
1890 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
TOSHIBA |
21+ |
SOT23 |
2670 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA |
23+ |
SOT23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
2022 |
SOT-23 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
2SA1162-TE85L |
13537 |
13537 |
詢價(jià) | ||||
TOSHIBA |
08+ |
SOT23 |
2670 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
NA/ |
5920 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) |
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