2SA1162-O

Marking：SO；Package：SOT-23；PNP Transistors

■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

Features ?Capableof0.15WattsofPowerDissipation. ?Collector-current:0.15A ?Collector-baseVoltage:-50V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ????????LeadFreeFinish/RoHS

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O

PNP Transistors

2SA1162-O_13

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O-HF

PNP Transistors

2SA1162-O,LF

Package：TO-236-3，SC-59，SOT-23-3；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O,LXHF

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O-AP

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 50V 0.15A SOT23

2SA1162S-Y-LF

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),