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IRFP22N60K

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.28?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP22N60K

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N60K

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IRFP22N60K

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EnhancedbodydiodedV/dtcapability ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N60KPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導體

IRFP22N60KPBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IXFC22N60P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC22N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH22N60P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFH22N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    22N60

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    HEXFET POWER MOSFET

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24+
8866
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UTC
24+
TO247
6000
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22+
TO-247
6000
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V
22+
TO-247
25000
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UTC/友順
23+
TO-247
50000
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UTC/友順
23+
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79999
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UTC/友順
24+
NA/
3280
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FK
25+
TO3P
12300
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Portescap
2010+
N/A
66
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JVE
2447
SMD
100500
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更多22N60供應商 更新時間2025-4-24 16:30:00

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