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首頁 >1N68>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
1N68	文件：2.79285 Mbytes Page：78 Pages	GOLD BONDED DIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
1N6815	文件：76.45 Kbytes Page：2 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6815R	文件：76.45 Kbytes Page：2 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6816	文件：77.19 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ?Tungstenschottkybarrier ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ?Lowpa	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6816R	文件：77.19 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ?Tungstenschottkybarrier ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ?Lowpa	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6817	文件：140.81 Kbytes Page：2 Pages	LOW REVERSE LEAKAGE SCHOTTKY DIODE LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features ?Tungstenschottkybarrier ?Oxidepassivatedstructure ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofile	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6817R	文件：140.81 Kbytes Page：2 Pages	LOW REVERSE LEAKAGE SCHOTTKY DIODE LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features ?Tungstenschottkybarrier ?Oxidepassivatedstructure ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofile	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6818	文件：88.48 Kbytes Page：2 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6818R	文件：88.48 Kbytes Page：2 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6819	文件：88.81 Kbytes Page：2 Pages	LOW LEAKAGE CURRENT SCHOTTKY DIODE Features ●Tungstenschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ●Lowpa	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6819R	文件：88.81 Kbytes Page：2 Pages	LOW LEAKAGE CURRENT SCHOTTKY DIODE Features ●Tungstenschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ●Lowpa	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6820	文件：88.02 Kbytes Page：2 Pages	LOW REVERSE LEAKAGE SCHOTTKY DIODE Features ?TungstenschottkybarrierforlowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackag	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6820R	文件：88.02 Kbytes Page：2 Pages	LOW REVERSE LEAKAGE SCHOTTKY DIODE Features ?TungstenschottkybarrierforlowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackag	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6821	文件：86.9 Kbytes Page：3 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6821R	文件：86.9 Kbytes Page：3 Pages	LOW VOLTAGE DROP SCHOTTKY DIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6822	文件：72.24 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6822R	文件：72.24 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ●Tungsten/Platinumschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6823	文件：80.28 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ·Tungsten/Platinumschottkybarrier ·Oxidepassivatedstructureforverylowleakagecurrents ·Guardringprotectionforincreasedreverseenergycapability ·Epitaxialstructureminimizesforwardvoltagedrop ·Epitaxialstructureminimizesforwardvoltagedrop ·Her	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6823R	文件：80.28 Kbytes Page：2 Pages	LOW LEAKAGE SCHOTTKY DIODE Features ·Tungsten/Platinumschottkybarrier ·Oxidepassivatedstructureforverylowleakagecurrents ·Guardringprotectionforincreasedreverseenergycapability ·Epitaxialstructureminimizesforwardvoltagedrop ·Epitaxialstructureminimizesforwardvoltagedrop ·Her	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N6836	文件：162.31 Kbytes Page：2 Pages	2,000 V - 5,000 V Rectifiers [VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 0.5A-1.5AForwardCurrent 30ns-50nsRecoveryTime AXIALLEADEDHERMETICALLYSEALED	ETCList of Unclassifed Manufacturers 未分類制造商	ETC

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詳細參數(shù)

型號：
1N68
功能描述：
GOLD BONDED DIODES

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
千層芯半導(dǎo)體(深圳)有限公司	1N6844U3JANTXV	IR	2018+	SMD	1680	IR專營品牌進口原裝現(xiàn)貨假一賠十	詢價
深圳市宇集芯電子有限公司	1N6839LL	VMI	24+	N/A	8000	一級代理現(xiàn)貨、保證進口原裝正品假一罰十價格合理	詢價
深圳市艾宇欣科技有限公司	1N6864	Microsemi	1942+	N/A	908	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
深圳市永貝爾科技有限公司	1N6857-1	CDI-DIODE	23+	原廠原包	19960	只做進口原裝終端工廠免費送樣	詢價
艾睿國際（香港）有限公司	1N6844U3JANTXV	INFINEON/英飛凌	2021+	20	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市科雨電子有限公司	1N6858-1	MICROSEMI	1809+	SMD	326	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市湘達電子科技有限公司	1N6837LL	VMI	2022+	DIP	8000	只做原裝支持實單,有單必成。	詢價
標準國際(香港)有限公司	1N6857-1JANTX	MSC			7	公司優(yōu)勢庫存熱賣中!!!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	1N68K		23+	SOT23-5	452585	原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳	詢價
深圳市河鋒鑫科技有限公司	1N6843CCU3(30CLJQ100)	IR	22+	N/A	6000	終端可免費供樣,支持BOM配單	詢價

更多1N68供應(yīng)商更新時間2024-11-2 16:02:00

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