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1N5819L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5819-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5819M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5819PT

VOLTAGERANGE20-40VoltsCURRENT1.0Ampere

CHENMKOchenmko

力勤股份有限公司

1N5819-R

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5819RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren

SHUNYEShanghai Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

DSK

Diode Semiconductor Korea

1N5819S

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比電子南通康比電子有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

1N5819S

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurrent

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

1N5819S

SchottkyBarrierRectifiers

VOLTAGERANGE:20---40VCURRENT:1.0A Features ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N5819JTX

  • 制造商：

    Microwave Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GK
SOD-123FL
568923
提供BOM表配單只做原裝貨值得信賴
 詢價(jià)
BYTES
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
UTC
2020+
SOT123
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
UTC
19+
SOD123
20000
3000
 詢價(jià)
UTC/友順
24+
4000
全新原裝數(shù)量均有多電話咨詢
 詢價(jià)
UTC
24+
SOD123
35200
全新原裝現(xiàn)貨/假一罰百!
 詢價(jià)
UTC
24+
SOD123
18560
假一賠十全新原裝現(xiàn)貨特價(jià)供應(yīng)工廠客戶可放款
 詢價(jià)
UTC/友順
23+
8650
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
UTC/友順
23+
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
UTC/友順
23+
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多1N5819JTX供應(yīng)商 更新時(shí)間2025-1-3 14:00:00

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