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1N5819M

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5819M

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

DIODES

Diodes Incorporated

1N5819M-13

Package：DO-213AB，MELF（玻璃）；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE SCHOTTKY 40V 1A MELF

PAM

Diodes Incorporated

1N5819PT

VOLTAGERANGE20-40VoltsCURRENT1.0Ampere

CHENMKOchenmko

力勤股份有限公司

1N5819-R

AxialLeadSchottkyDiode

MA-COM

M/A-COM Technology Solutions, Inc.

1N5819RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5819RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    1N5819M

  • 制造商：

    Diodes Incorporated

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY / General Semiconductor
2022
DO-213AB / LL41
1600
全新原裝,房間現(xiàn)貨
 詢價
VISHAY/GeneralSemiconduc
24+
DO-213ABLL41
21200
新進(jìn)庫存/原裝
 詢價
GS
24+
1A圓型
25000
原裝現(xiàn)貨假一罰十
 詢價
LL41
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
VISHAY
22+23+
LL-41
30956
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
GS
21+
1A圓型
15000
原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
23+
LL41
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
GS
23+
1A圓型
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ITT
24+
598000
原裝現(xiàn)貨假一賠十
 詢價
VISHAY/威世
2022
LL41
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多1N5819M供應(yīng)商 更新時間2025-3-12 10:02:00

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