首頁 >1N5819HW-F>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
LAUNCHXL-F28379D Overview | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu | DIODES Diodes Incorporated | DIODES | ||
1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER FeaturesandBenefits ?HighSurgeCapability ?LowPowerLoss,HighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?GuardRingDieConstructionforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device( | DIODES Diodes Incorporated | DIODES | ||
1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | BYTES Bytes | BYTES | ||
1ASCHOTTKYBARRIERRECTIFIERS FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE | FRONTIER Frontier Electronics | FRONTIER | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER | DIODES Diodes Incorporated | DIODES | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications | DIODES Diodes Incorporated | DIODES | ||
VOLTAGERANGE20-40VoltsCURRENT1.0Ampere | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
AxialLeadSchottkyDiode | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀微電子股份有限公司 | BILIN | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SHUNYEShanghai Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SHUNYE | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | DSK Diode Semiconductor Korea | DSK | ||
1.0AMP.SCHOTTKYBARRIERRECTIFIERS | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重慶平偉實業(yè)重慶平偉實業(yè)股份有限公司 | CHONGQING | ||
SCHOTTKYBARRIERRECTIFIER | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比電子南通康比電子有限公司 | HORNBY |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
DIODES/美臺 |
24+ |
SOD123 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
DIODES/美臺 |
23+ |
SOD-123 |
7600 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
DIODES/美臺 |
23+ |
SOD-123 |
7600 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
DIODES/美臺 |
20+ |
SMD |
88800 |
DIODES原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Diodes(美臺) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 | ||
DIODES/美臺 |
21+ |
SOD-123 |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 | ||
DIODES/美臺 |
21+ |
SOD-123 |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 | ||
DIODES/美臺 |
23+ |
NA |
6000 |
原裝正品假一罰百!可開增票! |
詢價 | ||
DIODES/美臺 |
23+ |
SOD-123 |
25000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 |
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