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1N5818L

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5818RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5818RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?volt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal?to?siliconpowerdiode.State?of?the?artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low?voltage,high?frequency

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5818S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

1N5818S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N5818L

  • 制造商：

    BYTES

  • 制造商全稱(chēng)：

    Bytes

  • 功能描述：

    1.0 AMP SCHOTTKY BARRIER RECTIFIERS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
BYTES
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
VISHAY/GeneralSemiconduc
24+
DO-213ABLL41
46200
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
VISHAY
21+
LL41
40420
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
GS
23+
1A
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
GS
2022
1A
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
DINC
N/A
9
詢(xún)價(jià)
GS
05+
1A圓形
35000
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
GS
23+
1A圓形
37500
原廠原裝正品
 詢(xún)價(jià)
GS
23+
NA/
35000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢(xún)價(jià)
DIODES/美臺(tái)
22+
LL41
12000
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十
 詢(xún)價(jià)
更多1N5818L供應(yīng)商 更新時(shí)間2025-3-12 10:26:00

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