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JAN1N5806

HERMETICAXIAL/MELFLEADRECTIFIER

UltrafastRecoveryRectifier ?Hermetic,non-cavityglasspackage ?Metallurgicallybonded ?OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

SENSITRON SEMICONDUCTOR

JAN1N5806

MILITARYAPPROVED,HIGHEFFICIENCY,2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

ULTRAFASTMILITARYRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806US

HERMETICAXIAL/MELFLEADRECTIFIER

UltrafastRecoveryRectifier ?Hermetic,non-cavityglasspackage ?Metallurgicallybonded ?OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

SENSITRON SEMICONDUCTOR

JAN1N5806US

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANHCE1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANHCF1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANKCE1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANKCF1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: ?ChipOutlineDimensions:41x41mils ?ChipThickness:8to12mils ?AnodeMetallization:Aluminum ?MetallizationThickness:50,000?Nominal ?BondingArea:23x23milsMin. ?BackMetallization:Gold ?JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign ?Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號:

    1N5806USJANTXT/R

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    Diode Switching 150V 2.5A 2-Pin A-MELF T/R

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
MICR0SEMI
24+
SMD
1250
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
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MSC
專業(yè)軍工
NA
1000
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MSC
三年內(nèi)
1983
只做原裝正品
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MICROCHIP
23+
7300
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MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
Microsemi
1942+
N/A
170
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詢價(jià)
MICROSEMI
1809+
SMD
326
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SEMTECHKMAV
http//wwwsemtechcom
pc downloadDocument do id 239
10000
全新原裝現(xiàn)貨 樣品可售
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CHINA
22+
SOD-64
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
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Microchip
23+
20000
全新、原裝、現(xiàn)貨
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更多1N5806USJANTXT/R供應(yīng)商 更新時(shí)間2025-1-24 14:26:00