INA215BIDCKT

Marking：13S；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

INA215BIRSWR

Marking：13R；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

IPB133N12NM6

Marking：133N12N6；Package：PG-TO263-3；MOSFET OptiMOS? 6 Power?Transistor, 120 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitching ?Pb?freeleadplating;RoHSco

IPB139N08N3G

Marking：136N08N；Package：PG-TO-263-3；OptiMOS3 Power-Transistor

eatures ?Idealforhighfrequencyswitching ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRps(an)product(FOM) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplications ?Halogen-free

IPD130N10NF2S

Marking：130N10NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

IPD135N03LG

Marking：135N03L；Package：TO-252；30V N -Channel MOSFET

Features *FastswitchingMOSFETforSMPS *OptimizedtechnologyforDC/DCconverters *ExcellentgatechargexRpson)product(FOM) *Verylowon-resistanceRpson) *Avalancherated

IPD13N03LA

Marking：13N03LA；Package：TO-252-3-11；OptiMOS?2 Power-Transistor

13NO3LA->CorrectPartnumber:13N03LA 1.Idealforhigh-frequencydc/dcconverters 2.QualifiedaccordingtoJEDECfortargetapplications 3.N-channel,logiclevel 4.ExcellentgatechargexRDS(on)product(FOM) 5.Superiorthermalresistance 6.175°Coperatingtemperature

IPD13N03LA

Marking：13N03LA；Package：TO-252-3-11；OptiMOS 2 Power-Transistor

13NO3LA->CorrectPartnumber:13N03LA 1.Idealforhigh-frequencydc/dcconverters 2.QualifiedaccordingtoJEDECfortargetapplications 3.N-channel,logiclevel 4.ExcellentgatechargexRDS(on)product(FOM) 5.Superiorthermalresistance 6.175°Coperatingtemperature

IPD13N03LA

Marking：13N03LA；Package：TO-252-3-11；OptiMOS 2 Power-Transistor

13NO3LA->CorrectPartnumber:13N03LA 1.Idealforhigh-frequencydc/dcconverters 2.QualifiedaccordingtoJEDECfortargetapplications 3.N-channel,logiclevel 4.ExcellentgatechargexRDS(on)product(FOM) 5.Superiorthermalresistance 6.175°Coperatingtemperature

IPI139N08N3G

Marking：139N08N；Package：PG-TO-262-3；OptiMOS3 Power-Transistor

eatures ?Idealforhighfrequencyswitching ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRps(an)product(FOM) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplications ?Halogen-free