| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：067N20N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 200 V Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：067N20N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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