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IPB038N15NM6

Marking：038N15N6；Package：PG-TO263-3；MOSFET OptiMOS? 6 Power?Transistor, 150 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21 ?MSL1classifiedaccordingtoJ?STD?020

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP038N15NM6

Marking：038N15N6；Package：PG-TO220-3；MOSFET OptiMOS? 6 Power?Transistor, 150 V

Features ?N?channel,normallevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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