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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
ZXT12N20DXTC	文件：259.82 Kbytes Page：6 Pages	DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic	Zetex Zetex Semiconductors	Zetex
ZXT12N20DXTC	文件：270.93 Kbytes Page：6 Pages	DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V;RSAT=40mΩ;IC=3.5A DESCRIPTION Thisnew4thgenerationultralowsaturationtransistorutilisestheZetexmatrixstructurecombinedwithadvancedassemblytechniquestogiveextremelylowonstatelosses.Thismakesitidealforhighefficiency,lowvoltageswitchingapplic	DIODES Diodes Incorporated	DIODES
12N20	文件：67.86 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQB12N20	文件：694.33 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB12N20L	文件：607.28 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20	文件：862.5 Kbytes Page：9 Pages	N-ChannelQFETMOSFET200V,9A,280m Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20	文件：862.5 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET200V,9A,280m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20	文件：1.00995 Mbytes Page：7 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
FQD12N20	文件：694.93 Kbytes Page：9 Pages	200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20	文件：293.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD12N20L	文件：299.9 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD12N20L	文件：606.86 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20LTM	文件：721.79 Kbytes Page：9 Pages	200VLogicLevelN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD12N20LTM	文件：659.91 Kbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=8A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD12N20TF	文件：716.36 Kbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=8A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD12N20TM	文件：716.61 Kbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=200V,ID=8A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD12N20TM	文件：862.5 Kbytes Page：9 Pages	N-ChannelQFETMOSFET200V,9A,280m Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI12N20L	文件：607.28 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP12N20	文件：567.77 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP12N20L	文件：302.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
ZXT12N20DXTC
功能描述：
兩極晶體管 - BJT Dual 20V NPN
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
PNP 集電極—基極電壓
VCBO：
集電極—發(fā)射極最大電壓
VCEO：
- 40 V 發(fā)射極 - 基極電壓
VEBO：
- 6 V
增益帶寬產(chǎn)品fT：
直流集電極/Base Gain hfe
Min：
100 A
安裝風(fēng)格：
SMD/SMT
封裝/箱體：
PowerFLAT 2 x 2

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市鵬順微電子科技有限公司	ZXT12N20DXTC	Diodes Incorporated	2022+	8-MSOP	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市宏捷佳電子科技有限公司	ZXT12N20DXTC	Diodes Incorporated	24+	8-TSSOP 8-MSOP(0.118 3.00mm	9350	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	ZXT12N20DXTR	ZETEX	23+	DIP16	5000	原裝正品,假一罰十	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	ZXT12N20DXTR	ZETEX	17+	MSOP8	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市佳鑫美電子科技有限公司	ZXT12N20DXTR	ZETEX	22+	MSOP8	2987	只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!	詢價(jià)
深圳市寶芯創(chuàng)電子有限公司	ZXT12N20DXTR	ZETEX	18+	MSOP8	36318	全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	ZXT12N20DXTR	ZETEX	20+	MSOP	35830	原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票	詢價(jià)
ZXT12N20DXTR	ZETEX	21+	MSOP8	6000	絕對(duì)原裝現(xiàn)貨	詢價(jià)
深圳市維爾達(dá)電子有限公司	ZXT12N20DXTR	ZETEX	2023+	MSOP8	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	ZXT12N20DXTR	ZETEX	21+	MSOP	35210	一級(jí)代理/放心采購(gòu)	詢價(jià)

更多ZXT12N20DXTC供應(yīng)商更新時(shí)間2024-11-7 8:24:00

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