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D1047

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpower amplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

D1047

TO-3PPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Largecurrentcapacitance ●ComplementaryPNPTypes:2SB817 APPLICATIONS ●Highaudiofrequencyoutputstage ●Poweramplifier

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

D1047

SiliconNPNPowerTransistors

DESCRIPTION ?Complementtotype2SB817 ?WithTO-3PNpackage APPLICATIONS ?Poweramplification ?Lowfrequencyandaudioband

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

D1047

POWERTRANSISTORS(12A,140V,100W)

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

D1047

NPNPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●Complementaryto2SB817

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

D1047

SiliconNPNtransistorinaTO-3PPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-3PPlasticPackage. Features For60Waudiofrequencyamplifieroutputstage,Complementaryto2SB817. Applications Designedforuseinaudiofrequencyamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

D1047

140V/12AAF60WOutputApplications

Features ?Capableofbeingmountedeasilybecauseofone pointfixingtypeplasticmoldedpackage(Inter changeablewithTO-3). ?WideASObecauseofon-chipballastresistance. ?GooddepenedenceoffToncurrentandexcellent highfrequencyresponce. Thedescriptionsinpare

SANYOSanyo Semicon Device

三洋三洋電機株式會社

D1047

Powersupply

Description ThedeviceisaNPNtransistormanufacturedusingnewBiT-LA(Bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=140V ■Typicalft=20MHz ■Fullycharacterizedat125°C Ap

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

D1047C

140V/12A,AF80WOutputApplications

Features ?Largecurrentcapacitance. ?WideASOandhighdurabilityagainstbreakdown. ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

D1047E

SiliconNPNPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=140V(Min) ?GoodLinearityofhFE ?HighCurrentCapability ?WideAreaofSafeOperation ?ComplementtoType2SB817E ?MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

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7571
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