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WS57C51C-45DMB中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

WS57C51C-45DMB
廠商型號

WS57C51C-45DMB

功能描述

HIGH SPEED 16K x 8 CMOS PROM/RPROM

文件大小

53.9 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-20 22:30:00

WS57C51C-45DMB規(guī)格書詳情

GENERAL DESCRIPTION

The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterparts.

A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100 tested with worst case test patterns both before and after assembly.

The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes need be performed.

KEY FEATURES

? Very Fast Access Time

— 35 ns

? Low Power Consumption

? Fast Programming

? Pin Compatible with Am27S51 and N82HS1281

? Immune to Latch-Up)

— Up to 200 mA

? ESD Protection Exceeds 2000 V

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